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Same model may have multiple batches, images only for reference.
IRFR5505GTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR5505GTRPBF

Part No IRFR5505GTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 18A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 650pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 9.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 103960-IRFR5505GTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR5505GTRPBF CAD Model

Description

It is commonly used in power management and has a maximum power dissipation of 57W and a maximum Rds On of 110 mOhm @ 9.6A and 10V.

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 32nC @ 10V
  • Maximum Input Capacitance: 650pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Status: Discontinued

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4090 $51.1250
300+ $0.3356 $100.6800
465+ $0.3252 $151.2180
640+ $0.3147 $201.4080
825+ $0.3042 $250.9650
1,105+ $0.2727 $301.3335
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Availability: 372 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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