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IRFSL7440PBF

Part No IRFSL7440PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 40V 120A TO-262  /  N-Channel 40 V 120A (Tc) 208W (Tc) Through Hole TO-262
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®, StrongIRFET™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4730 pF @ 25 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IRFSL7440
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001573650
Standard Package 1,000
Win Source Part Number 1018879-IRFSL7440PBF
Ultra Librarian 3D Model Ultra Librarian IRFSL7440PBF CAD Model

Description

Infineon Technologies' IRFSL7440PBF is an N-channel MOSFET transistor with a drain to source voltage of 40V and a continuous drain current of 120A (Tc).

  • Rds On (Max): 2.5mOhm @ 100A, 10V
  • Gate Charge (Qg): 135 nC @ 10 V
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Power Dissipation (Max): 208W (Tc)
  • Supplier Device Package: TO-262
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8923 $53.5380
140+ $0.7321 $102.4940
215+ $0.7093 $152.4995
295+ $0.6864 $202.4880
380+ $0.6635 $252.1300
505+ $0.5949 $300.4245
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,480 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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