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NDFP03N150CG

Part No NDFP03N150CG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel Power MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1500V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Maximum) @ Vgs 34nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 650pF @ 30V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 2W (Ta), 32W (Tc)
Rds On (Maximum) @ Id, Vgs 10.5 Ohm @ 1A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220-3
Package TO-220-3 Full Pack
Win Source Part Number 1230856-NDFP03N150CG
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name NDFP03N150C
Introduction Date November 11, 2013
ECCN EAR99
Country of Origin Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NDFP03N150CG CAD Model

Description

ON Semiconductor NDFP03N150CG Power MOSFET

The NDFP03N150CG is a cutting-edge power MOSFET product from ON Semiconductor, designed to cater to a wide array of applications requiring high efficiency and reliability. This device is part of ON Semiconductor's portfolio of power management solutions, specifically tailored for high-performance power conversion and switching applications.

The NDFP03N150CG is a N-channel MOSFET that stands out with its 1500V drain-source breakdown voltage (V<sub>DS), making it an excellent choice for systems that experience high voltage stress. It is capable of sustaining a continuous drain current (I<sub>D) of 3A, ensuring that it can handle significant power without compromising performance. The device's R<sub>DS(on), or drain-source on-resistance, is another key feature, with a typical value of 2.4Ω, which translates to reduced power loss and improved efficiency in operation.

One of the core advantages of the NDFP03N150CG is its PowerTrench<sup>® technology, which ON Semiconductor has integrated to optimize the device for low gate charge (Q<sub>G), low capacitance (C<sub>iss), and low leakage. These characteristics are critical for achieving fast switching performance and low conduction losses, making the MOSFET suitable for high-frequency applications such as switch-mode power supplies (SMPS), lighting, DC-DC converters, and power inverters.

The MOSFET is housed in a TO-220FP package, which is known for its robustness and excellent thermal performance. The package design allows for efficient heat dissipation, ensuring that the NDFP03N150CG maintains its integrity and performance even under high thermal stress conditions. Additionally, the device is RoHS compliant, highlighting ON Semiconductor's commitment to environmental sustainability by avoiding the use of hazardous substances in its products.

Overall, ON Semiconductor's NDFP03N150CG power MOSFET is an ideal solution for designers looking for a high-voltage, high-efficiency, and reliable component for their power management and conversion applications. Its advanced features and robust packaging make it a versatile and durable choice for a broad range of industrial, commercial, and consumer electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
29+ $1.7342 $50.2918
62+ $1.6224 $100.5888
96+ $1.5664 $150.3744
138+ $1.4545 $200.7210
179+ $1.3986 $250.3494
224+ $1.3427 $300.7648
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Availability: 55,500 pieces
MOQ: 29 pcs
Order Increment : 1 pcs
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