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Same model may have multiple batches, images only for reference.
IRL2505STRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRL2505STRLPBF

Part No IRL2505STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 104A D2PAK
Datasheet
IRL2505STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 130nC @ 5V
Max Input Capacitance 5000pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 54A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 138325-IRL2505STRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL2505STRLPBF CAD Model

Description

The Infineon Technologies IRL2505STRLPBF is an N-Channel MOSFET semiconductor device manufactured by Infineon Technologies.

  • Supply and Demand Status: limited.
  • Suitable for: a wide range of applications, including communications and networking, power management, consumer electronics, and motor drive and control.
  • Maximum Drain-Source Breakdown Voltage: 55V
  • Maximum Power Dissipation: 3.8W
  • Temperature Range: -55 to 175 degrees Celsius.
  • Package: D2PAK.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $29.1044 $58.2088
5+ $23.8806 $119.4030
7+ $23.1343 $161.9401
9+ $22.3880 $201.4920
12+ $21.6418 $259.7016
16+ $19.4030 $310.4480
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Availability: 3,670 pieces
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