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IRL3715ZSTRR

Part No IRL3715ZSTRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 50A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 870pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047490-IRL3715ZSTRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3715ZSTRR CAD Model

Description

The IRL3715ZSTRR is an N-Channel MOSFET transistor manufactured by Infineon Technologies.

  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Maximum Power Dissipation: 45W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 50A @ 25°C
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 11 mOhm @ 15A, 10V

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