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Same model may have multiple batches, images only for reference.
IRLR8113TR Real Image
Same model may have multiple batches, images only for reference.

IRLR8113TR

Part No IRLR8113TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 94A DPAK
Datasheet
IRLR8113TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 32nC @ 4.5V
Max Input Capacitance 2920pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047638-IRLR8113TR
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian IRLR8113TR CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power MOSFET with a maximum power dissipation of 89W (Tc).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 94A (Tc)
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 32nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 6 mOhm @ 15A, 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Type: SMD (SMT)
  • Category: Discrete Semiconductor Product
  • Status: Obsolete (EOL)
  • Package Quantity: 2k pcs

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515+ $0.2252 $115.9780
795+ $0.2183 $173.5485
1,095+ $0.2114 $231.4830
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1,900+ $0.1825 $346.7500
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