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Same model may have multiple batches, images only for reference.
IRLU4343 Real Image
Same model may have multiple batches, images only for reference.

IRLU4343

Part No IRLU4343
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 26A I-PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 740pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 4.7A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 127952-IRLU4343
Popularity Medium
Supply and Demand Status Limited
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRLU4343 CAD Model

Description

The Infineon Technologies IRLU4343 is an N-Channel MOSFET transistor that is used in various applications.

  • Power Dissipation: Up to 79W (Tc)
  • Popularity: Medium
  • Packaging: Tube/Rail
  • Mounting Type: Through-Hole
  • Technology: MOSFET
  • Polarity: N-Channel
  • Win Source Part Number: 127952-IRLU4343
  • Supply and Demand: Limited
  • Package: I-Pak
  • Dimension: TO-251-3 Short Leads, IPak, TO-251AA
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 26A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 42nC @ 10V
  • Maximum Input Capacitance: 740pF @ 50V
  • Maximum Rds On at Id,Vgs: 50 mOhm @ 4.7A, 10V
  • Temperature Range: -55°C to 175°C (TJ)

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