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SPA07N60C3 Infineon Technologies SPA07N60C3 Real Image
Same model may have multiple batches, images only for reference.
SPA07N60C3 Infineon Technologies SPA07N60C3 Real Image
SPA07N60C3 Infineon Technologies SPA07N60C3 Real Image
Same model may have multiple batches, images only for reference.

SPA07N60C3

Part No SPA07N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.3A TO-220
Datasheet
SPA07N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 32W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 091570-SPA07N60C3
Family Name SPA07N60C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPA07N60C3 CAD Model

Description

The SPA07N60C3 is an N-channel MOSFET designed for low-power applications.

  • Family: SPA07N60C3
  • Package: PG-TO220-FP
  • Voltage Rating: 650V
  • Maximum Current: 7.3A (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 250μA
  • Max Gate Charge: 27nC @ 10V
  • Maximum Rds On @ Id,Vgs: 600 mOhm @ 4.6A, 10V
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1486 $51.6870
110+ $0.9424 $103.6640
165+ $0.9130 $150.6450
230+ $0.8835 $203.2050
295+ $0.8541 $251.9595
395+ $0.7657 $302.4515
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