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Same model may have multiple batches, images only for reference.
SPI80N08S2-07 Real Image
Same model may have multiple batches, images only for reference.

SPI80N08S2-07

Part No SPI80N08S2-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPI80N08S2-07 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.4mOhm @ 66A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6130 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI80N
Other Names SPI80N08S207,SP000013954
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278291-SPI80N08S2-07
Ultra Librarian 3D Model Ultra Librarian SPI80N08S2-07 CAD Model

Description

The 1278291-SPI80N08S2-07 is an N-channel MOSFET transistor from the OptiMOS series.

  • Maximum Drain-Source Voltage: 75V
  • Maximum Continuous Drain Current @ 25°C: 80A
  • Maximum On-Resistance: 7.4mOhm @ 66A and 10V
  • Gate Threshold Voltage: 4V @ 250μA
  • Maximum Power Dissipation: 300W @ a case temperature of 25°C
  • Mounting Type: Through-hole
  • Package: TO-262-3
  • Operating Temperature Range: -55°C to 175°C

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