The Infineon Technologies SPP20N60C3 is a MOSFET transistor that is designed for various electronic applications.

• Polarity: N-Channel
• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 20.7A (Tc)
• Maximum Rds On @ Id,Vgs: 190 mOhm @ 13.1A, 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Gate Charge: 114nC @ 10V
• Package: PG-TO220-3-1
• Dimensions: TO-220-3
• Power Dissipation (max): 208W (Tc)
• Temperature Range: -55°C to 150°C (TJ)
• Category: Discrete semiconductor product
• Status: Active
• Popularity: High
• Halogen-Free: Yes
• ECCN: EAR99
• Estimated EOL Date: 2019