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Same model may have multiple batches, images only for reference.
SPP80N06S2L-07 Real Image
Same model may have multiple batches, images only for reference.

SPP80N06S2L-07

Part No SPP80N06S2L-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-220
Datasheet
SPP80N06S2L-07 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 150μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 4210pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 210W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 065972-SPP80N06S2L-07
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Lighting, Industrial
Ultra Librarian 3D Model Ultra Librarian SPP80N06S2L-07 CAD Model

Description

The Infineon Technologies 065972-SPP80N06S2L-07 MOSFET is a high-performance N-channel power MOSFET with a drain-source breakdown voltage of 55V and a maximum continuous drain current of 80A @ 25°C. The 065972-SPP80N06S2L-07 MOSFET from Infineon Technologies is a high-performance N-channel power MOSFET with a drain-source breakdown voltage of 55V and a maximum continuous drain current of 80A @ 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A @ 25°C
  • Power Dissipation: 210W
  • Maximum Input Capacitance: 4210pF @ 25V
  • Package: PG-TO220-3-1
  • Temperature Range: -55°C to 175°C
  • Application: Industrial and lighting

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