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Same model may have multiple batches, images only for reference.
IXFH20N100P Real Image
Same model may have multiple batches, images only for reference.

IXFH20N100P

Part No IXFH20N100P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 20A TO-247
Datasheet
IXFH20N100P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 6.5V @ 1mA
Max Gate Charge 126nC @ 10V
Max Input Capacitance 7300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 660W (Tc)
Maximum Rds On at Id,Vgs 570 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049390-IXFH20N100P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH20N100P CAD Model

Description

The IXYS MOSFET is a high-performance electronic component that can be used in a variety of applications.

  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 20A
  • Gate-Source Threshold Voltage: 6.5V @ 1mA
  • Maximum Gate Charge: 126nC @ 10V
  • Maximum Input Capacitance: 7300pF @ 25V
  • Maximum Rds On at Id,Vgs: 570 mOhm @ 10A, 10V
  • Package: TO-247AD (IXFH)
  • Dimension: TO-247-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.0038 $64.0152
8+ $13.1313 $105.0504
12+ $12.7210 $152.6520
17+ $12.3106 $209.2802
22+ $11.9003 $261.8066
29+ $10.6692 $309.4068
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Availability: 65,000 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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