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Same model may have multiple batches, images only for reference.
IXFH40N30 Real Image
Same model may have multiple batches, images only for reference.

IXFH40N30

Part No IXFH40N30
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 40A TO-247AD
Datasheet
IXFH40N30 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 4800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049427-IXFH40N30
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian IXFH40N30 CAD Model

Description

The IXYS MOSFET is a high-performance N-channel power transistor designed for use in a wide range of applications.

  • Power Dissipation (Max): 300W (Tc)
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current: 40A (Tc)
  • Maximum Rds On: 85 mOhm @ 500mA, 10V
  • Gate-Source Threshold Voltage: 4V @ 4mA
  • Maximum Gate Charge: 200nC @ 10V
  • Package: TO-247AD (IXFH)
  • Applications: Power Supplies, Motor Control, and Lighting

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