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Same model may have multiple batches, images only for reference.
IXFH80N08 Real Image
Same model may have multiple batches, images only for reference.

IXFH80N08

Part No IXFH80N08
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 80A TO-247 / Trans MOSFET N-CH 80V 80A 3-Pin(3+Tab) TO-247AD
Datasheet
IXFH80N08 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 80V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs 180nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4800pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 9 mOhm @ 40A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247AD (IXFH)
Package TO-247-3
Win Source Part Number 777615-IXFH80N08
Popularity Medium
Supply and Demand Status Limited
Family Name IXFH80N08
Introduction Date May 25, 2001
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IXFH80N08 CAD Model

Description

The IXYS HiPerFET MOSFET is a high-performance transistor designed for use in discrete semiconductor products, manufactured by IXYS.

  • Current Rating @ Tc: 80A
  • Drain Source Voltage: 80V
  • Mounting Style: Through-hole
  • Package: TO-247-3
  • Technology: N-channel
  • Gate Charge (Qg) @ 10V: 180nC
  • Input Capacitance (Ciss) @ 25V: 4800pF
  • Power Dissipation @ Tc: 300W
  • Rds On @ 40A, 10V: 9 mOhm
  • Maximum Vgs: ±20V
  • Status: Obsolete (EOL)
  • Alternative Parts: FQA160N08-NL, FQA160N08
  • Estimated EOL Date: 2022

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