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IXFN44N100Q3

Part No IXFN44N100Q3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 38A SOT227B  /  N-Channel 1000 V 38A (Tc) 960W (Tc) Chassis Mount SOT-227B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Q3 Class
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 264 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 25 V
Power Dissipation (Max) 960W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN44
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1029969-IXFN44N100Q3
Ultra Librarian 3D Model Ultra Librarian IXFN44N100Q3 CAD Model

Description

The IXYS IXFN44N100Q3 is a MOSFET transistor with a HiPerFET™, Q3 Class series.

  • Transistor Type: N-Channel
  • Drain to Source Voltage (Vdss): 1000V
  • Continuous Drain Current (Id): 38A @ 25°C
  • On-Resistance (Rds On): 220mOhm @ 22A and 10V
  • Gate Threshold Voltage (Vgs(th)): 6.5V @ 8mA
  • Maximum Gate-Source Voltage (Vgs): ±30V
  • Package: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
  • Mounting Type: Chassis Mount
  • Power Dissipation: 960W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $53.1642 $53.1642
3+ $43.6219 $130.8657
4+ $42.2588 $169.0352
5+ $40.8956 $204.4780
7+ $39.5324 $276.7268
9+ $35.4428 $318.9852
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40 pieces
Order Increment : 1 pcs
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