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Same model may have multiple batches, images only for reference.
IXTH360N055T2 Real Image
Same model may have multiple batches, images only for reference.

IXTH360N055T2

Part No IXTH360N055T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 360A TO-247
Datasheet
IXTH360N055T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 360A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 330nC @ 10V
Max Input Capacitance 20000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 935W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049799-IXTH360N055T2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH360N055T2 CAD Model

Description

The IXTH360N055T2 is an N-Channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current (Id) of 360A (Tc).

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 330nC @ 10V
  • Maximum Rds On @ Id, Vgs: 2.4 mOhm @ 100A, 10V
  • Power Dissipation (Max): 935W (Tc)
  • Input Capacitance: 20000pF @ 25V
  • Mounting Type: Through Hole
  • Package / Case: TO-247 (IXTH)
  • Applications: power supplies, motor drives, and inverters

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.5442 $62.7210
12+ $10.2928 $123.5136
18+ $9.9711 $179.4798
24+ $9.6495 $231.5880
31+ $9.3278 $289.1618
42+ $8.3629 $351.2418
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Availability: 1,320 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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