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Same model may have multiple batches, images only for reference.
IXTH60N25 Real Image
Same model may have multiple batches, images only for reference.

IXTH60N25

Part No IXTH60N25
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 60A TO-247
Datasheet
IXTH60N25 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 164nC @ 10V
Max Input Capacitance 4400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 400W (Tc)
Maximum Rds On at Id,Vgs 46 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049823-IXTH60N25
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH60N25 CAD Model

Description

The IXYS IXTH60N25 is a N-channel MOSFET with a drain-source breakdown voltage of 250V and a continuous drain current of 60A at 25°C.

  • Maximum Power Dissipation: 400W
  • Maximum Gate-Source Voltage: ±20V
  • Mounting: Through Hole
  • Package Dimension: TO-247-3
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 164nC @ 10V
  • Maximum Input Capacitance: 4400pF @ 25V
  • Temperature Range: -55°C to 150°C (TJ)

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