The IXYS IXTP24N65X2M is a N-channel MOSFET (Metal Oxide) electronic component that is designed for use in various discrete semiconductor products. This component has a drain to source voltage (Vdss) of 650V and a current continuous drain (Id) of 24A (Tc) @ 25°C. The IXTP24N65X2M is a TO-220-3 full pack, isolated tab package style component that is mounted through a hole.

• Manufacturer: IXYS
• FET Type: N-Channel MOSFET (Metal Oxide)
• Application: Discrete Semiconductor Products
• Drain to Source Voltage (Vdss): 650V
• Current Continuous Drain (Id): 24A (Tc) @ 25°C
• Package Style: TO-220-3 Full Pack, Isolated Tab
• Mounting Type: Through Hole
• Gate Charge (Qg): 36 nC @ 10V
• Input Capacitance (Ciss): 2060 pF @ 25V
• Vgs(th) (Max): 5V @ 250μA
• Power Dissipation (max): 37W (Tc)
• Operating Temperature Range: -55°C to 150°C (TJ)