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Same model may have multiple batches, images only for reference.
IXTQ130N10T Real Image
Same model may have multiple batches, images only for reference.

IXTQ130N10T

Part No IXTQ130N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 130A TO-3P
Datasheet
IXTQ130N10T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 104nC @ 10V
Max Input Capacitance 5080pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 9.1 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 040918-IXTQ130N10T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTQ130N10T CAD Model

Description

The IXYS IXTQ130N10T is a MOSFET technology component with a maximum power dissipation of 360W (Tc).

  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Manufacturer: IXYS
  • Manufacturer Homepage: www.ixys.com
  • Win Source Part Number: 040918-IXTQ130N10T
  • Packaging: Tube/rail
  • Mounting: Through-hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0994 $52.6898
35+ $2.9032 $101.6120
54+ $2.8051 $151.4754
77+ $2.6090 $200.8930
100+ $2.5109 $251.0900
125+ $2.4128 $301.6000
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Availability: 27,000 pieces
MOQ: 17 pcs
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