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2N1711S

Part No 2N1711S
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description NPN TRANSISTOR
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Microchip Technology
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 800 mW
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Base Product Number 2N1711
Standard Package 1 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 854963-2N1711S
Ultra Librarian 3D Model Ultra Librarian 2N1711S CAD Model

Description

Product Overview: 2N1711S by Microchip Technology

The 2N1711S is a versatile and reliable NPN bipolar junction transistor (BJT) developed by Microchip Technology, a leading provider of microcontroller, mixed-signal, analog, and Flash-IP solutions. This semiconductor device is designed for general-purpose amplification and switching applications, offering a balanced performance that makes it suitable for a wide range of electronic circuits.

Key Features

  • Voltage Ratings: It can handle a collector-base voltage (VCBO) of 60V, a collector-emitter voltage (VCEO) of 50V, and an emitter-base voltage (VEBO) of 5V, providing ample headroom for many electronic designs.
  • Current Handling: With a continuous collector current (IC) of up to 500mA, the 2N1711S can drive moderate loads, making it suitable for power-switching circuits.
  • Power Dissipation: This transistor is capable of dissipating up to 800mW of power, allowing it to manage a fair amount of heat generated during operation.
  • High Gain Bandwidth Product: The device offers a transition frequency (fT) of 250MHz, which is indicative of its ability to handle high-frequency signals.
  • TO-39 Metal Can Package: The 2N1711S is enclosed in a TO-39 metal can package, which provides robust physical protection and excellent thermal conductivity for improved heat dissipation.

Applications

The adaptability of the 2N1711S makes it an excellent choice for a multitude of applications, including but not limited to:

  • Audio amplifiers and pre-amplifiers
  • Signal processing
  • Switching and linear amplification
  • Voltage regulation circuits
  • Driver stages in hi-fi amplifiers and television circuits

Quality and Reliability

Microchip Technology is known for its commitment to quality, and the 2N1711S is no exception. Each transistor is manufactured to meet high standards for performance and reliability, ensuring that your electronic projects function smoothly and consistently.

Conclusion

Whether you are designing a new audio amplifier, working on signal processing, or creating a robust switching circuit, the 2N1711S from Microchip Technology offers the performance and reliability you need. Its comprehensive feature set and versatile applications make it a valuable component for any electronics enthusiast or professional engineer.

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