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Same model may have multiple batches, images only for reference.
APT18M100B Real Image
Same model may have multiple batches, images only for reference.

APT18M100B

Part No APT18M100B
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 18A TO-247
Datasheet
APT18M100B Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 4845pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 625W (Tc)
Maximum Rds On at Id,Vgs 700 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Dimension TO-247-3
Win Source Part Number 1017986-APT18M100B
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APT18M100B CAD Model

Description

The APT18M100B is an N-channel MOSFET manufactured by Microsemi Corporation.

  • Packaging: Tube/rail
  • Mounting: Through hole
  • Power Dissipation: 625W
  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 18A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 700 mOhm @ 9A, 10V
  • Status: Active
  • Operating Temperature: -55°C to 150°C

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