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PMV20ENR

Part No PMV20ENR
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 10.8nC @ 10V
Max Input Capacitance 435pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 510mW (Ta), 6.94W (Tc)
Maximum Rds On at Id,Vgs 21 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089777-PMV20ENR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV20ENR CAD Model

Description

The Nexperia USA Inc. PMV20ENR is a surface mountable N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 6A (Ta).

  • Manufacturer: Nexperia USA Inc.
  • Mounting Type: Surface Mountable
  • Channel Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6A (Ta)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 10.8nC @ 10V
  • Maximum Input Capacitance: 435pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 21 mOhm @ 6A, 10V
  • Supply and Demand Status: Sufficient
  • Common Application: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
31+ $1.6157 $50.0867
67+ $1.5134 $101.3978
103+ $1.4623 $150.6169
148+ $1.3600 $201.2800
192+ $1.3089 $251.3088
239+ $1.2578 $300.6142
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 90,000 pieces
MOQ: 31 pcs
Order Increment : 1 pcs
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