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2N7002BKMB,315

Part No 2N7002BKMB,315
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 450MA 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 0.6nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 1.6 Ohm @ 450mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-DFN1006B (0.6x1)
Dimension 3-XFDFN
Win Source Part Number 126868-2N7002BKMB,315
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2N7002BKMB,315 CAD Model

Description

Introducing the 2N7002BKMB,315 MOSFET from NXP Semiconductors

The 2N7002BKMB,315 is a high-performance, small-signal N-channel Field-Effect Transistor (MOSFET) designed and manufactured by NXP Semiconductors. This versatile component is a staple in the electronics industry, known for its efficiency and reliability. It is particularly well-suited for a wide range of applications, from power management to signal processing.

Key Features

  • Device Type: N-channel MOSFET
  • Package: DFN2020-6 (SOT1118) - A compact package that saves valuable board space.
  • Drain-Source Voltage (VDS): 60V - Offers a robust breakdown voltage suitable for various applications.
  • Continuous Drain Current (ID): 300mA - Capable of handling moderate current loads.
  • On-Resistance (RDS(on)): 1.7Ω (max) - Low on-resistance ensures minimal power loss and heat generation.
  • Gate Threshold Voltage (VGS(th)): 1.0V (min) - Allows for low-voltage operation, making it ideal for portable and battery-powered devices.
  • Fast Switching Speed: Enhances performance in high-speed switching applications.
  • Low Gate Charge (QG): Reduces switching losses and improves efficiency.

Applications

The 2N7002BKMB,315 is engineered for versatility, making it an excellent choice for a myriad of applications. It is commonly used in:

  • Load switches
  • Power management circuits
  • DC-DC converters
  • Battery management systems
  • Motor control circuits
  • LED lighting solutions
  • Logic level translation

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The 2N7002BKMB,315 MOSFET is no exception, with rigorous testing and quality control measures in place to ensure consistent performance across all units. As a result, engineers and designers can confidently integrate this MOSFET into their designs, knowing it will deliver the performance and durability required for their demanding applications.

Environmental Compliance

The 2N7002BKMB,315 is RoHS compliant and free from environmentally harmful substances, reflecting NXP's dedication to environmental sustainability. This commitment ensures that the product is not only advanced in terms of technology but also responsible in its ecological impact.

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Pricing & Ordering

Quantity Unit Price Ext. Price
585+ $0.0860 $50.3100
1,420+ $0.0706 $100.2520
2,195+ $0.0684 $150.1380
3,025+ $0.0662 $200.2550
3,910+ $0.0640 $250.2400
5,230+ $0.0574 $300.2020
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 305,720 pieces
MOQ: 585 pcs
Order Increment : 1 pcs
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