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BUK9616-55A

Part No BUK9616-55A
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 66A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 3085pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 138W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 039743-BUK9616-55A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK9616-55A CAD Model

Description

Introducing the BUK9616-55A Power MOSFET by NXP Semiconductors

Explore the capabilities of the BUK9616-55A, a robust power MOSFET brought to you by NXP Semiconductors, a leader in the industry. This high-performance component is designed to cater to a wide range of power applications, offering a perfect blend of efficiency and reliability. The BUK9616-55A is an essential building block for modern electronic systems that require efficient power management.

With a 55V drain-source voltage (V<sub>DS) and a 75A drain current (I<sub>D), the BUK9616-55A stands out for its ability to handle high currents with ease. Its low on-state resistance (R<sub>DS(on)) of just 8.5 mΩ minimizes power losses, ensuring that the device operates at optimal efficiency, which is critical for energy-sensitive applications.

The BUK9616-55A is housed in a TO-220AB package, a widely used and reliable package that simplifies the assembly process and enhances thermal performance. This packaging, combined with the MOSFET's high current rating and low thermal resistance, allows for better heat dissipation, contributing to the overall longevity and stability of the device under various operating conditions.

One of the standout features of this NXP MOSFET is its TrenchMOS technology, which is a testament to NXP's commitment to innovation. This technology offers superior switching performance and reduced gate charge (Q<sub>G), which translates to faster switching speeds and reduced switching losses, making the BUK9616-55A an excellent choice for high-frequency power switching applications.

The device is also characterized by its robustness, with features such as an integrated diode for fast switching and protection against reverse current. This makes the BUK9616-55A highly suitable for demanding environments where reliability is paramount, such as automotive applications, DC-DC converters, and power management systems.

In summary, the BUK9616-55A from NXP Semiconductors is a testament to the company's expertise in power MOSFET technology. It offers a combination of high power handling, efficiency, and reliability, making it an ideal choice for designers looking to enhance the performance of their power-sensitive applications.

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