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PDTB113ZK,115

Part No PDTB113ZK,115
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 250MW SMT3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 250 mW Surface Mount SMT3; MPAK
Manufacturer NXP
Package Reel - TR
Part Status Obsolete
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SMT3; MPAK
Family Name PDTB11
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number 934058971115, PDTB113ZK T/R, PDTB113ZK T/R-ND
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 930186-PDTB113ZK,115
Ultra Librarian 3D Model Ultra Librarian PDTB113ZK,115 CAD Model

Description

The PDTB113ZK,115 is a high-quality PNP bipolar digital transistor manufactured by NXP Semiconductors. This transistor is a robust electronic component designed for switching and amplification purposes across a wide array of applications. The device is housed in a compact SOT-346 (SC-59) package, which is ideal for space-constrained applications.

Key Features

  • Transistor Type: PNP - The PDTB113ZK,115 is a PNP transistor, which means it is turned on when a small current flows through the base in the opposite direction of the emitter.
  • Configuration: Single - This device is a single transistor, which makes it suitable for simple switching and amplification tasks.
  • Collector-Emitter Voltage (Vceo): 50V - The transistor can withstand up to 50 volts across the collector and emitter terminals, providing a good range of operation for various circuits.
  • Collector Current (Ic): 100mA - With a collector current rating of 100mA, this transistor can handle moderate current loads, making it versatile for different types of electronic designs.
  • Power Dissipation (Pd): 250mW - The PDTB113ZK,115 is capable of dissipating 250 milliwatts of power, which allows it to manage a fair amount of energy without overheating.
  • DC Current Gain (hFE): 100 at 10mA, 5V - This indicates the transistor's ability to amplify the input signal, with a DC current gain of 100 at specified conditions.
  • Operating Temperature Range: -65°C to +150°C - The device can operate effectively across a wide temperature range, making it suitable for harsh environments.
  • Mounting Type: Surface Mount - The SOT-346 package is designed for surface mounting, which is beneficial for modern, automated production processes.

Applications

The PDTB113ZK,115 is ideal for a variety of applications, including but not limited to signal processing, power management, and control systems. Its small size and high performance make it an excellent choice for portable devices, consumer electronics, and industrial automation systems. NXP's commitment to quality ensures that this transistor will provide reliable performance in your electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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