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PMN28UN,165

Part No PMN28UN,165
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 5.7A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 700mV @ 1mA
Max Gate Charge 10.1nC @ 4.5V
Max Input Capacitance 740pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.75W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 112569-PMN28UN,165
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Portable Devices, Computers & Computer Peripherals
Quantity per package 10k pcs
Ultra Librarian 3D Model Ultra Librarian PMN28UN,165 CAD Model

Description

Product Overview: PMN28UN,165

The PMN28UN,165 is a cutting-edge MOSFET transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This high-performance product is part of NXP's extensive portfolio of metal-oxide-semiconductor field-effect transistors (MOSFETs) that cater to a wide range of applications requiring efficient power management and conversion.

Key Features

  • Low On-Resistance: The PMN28UN,165 boasts a very low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET can operate at high frequencies, making it ideal for power supplies, converters, and other power-related applications.
  • Advanced Packaging: Encased in a compact, leadless package, the PMN28UN,165 saves valuable board space and is optimized for surface-mount technology (SMT).
  • Robust Thermal Performance: The MOSFET is engineered to handle significant thermal stress, ensuring reliable performance under varying operating conditions.

Applications

The PMN28UN,165 is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Power management modules
  • Motor control circuits
  • Battery management systems
  • Load switches
  • High-efficiency power supplies

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 20V Continuous Drain Current (I<sub>D) 8.7A Power Dissipation (P<sub>D) 1.4W Operating Temperature Range -55°C to +150°C

The PMN28UN,165 is not just a component; it's a testament to NXP's commitment to providing advanced solutions that meet the demanding requirements of modern electronic systems. With its superior performance and reliability, the PMN28UN,165 is an excellent choice for designers looking to optimize their power management strategies.

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