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PSMN030-150P

Part No PSMN030-150P
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 55.5A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 55.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 98nC @ 10V
Max Input Capacitance 3680pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 210281-PSMN030-150P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN030-150P CAD Model

Description

The PSMN030-150P is a high-performance, 150V N-channel MOSFET produced by NXP Semiconductors. Designed to offer both low on-state resistance and high switching performance, this MOSFET is a versatile component suitable for a wide range of power management applications. Its robust construction ensures reliability and longevity, making it an ideal choice for designers looking to optimize their power circuits.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The PSMN030-150P boasts an extremely low on-state resistance, which minimizes conduction losses and improves overall efficiency, especially in applications where high current handling is essential.
  • High Switching Performance: With its fast switching capabilities, this MOSFET is capable of operating at high frequencies, which is beneficial for reducing the size of passive components and improving power density.
  • High Voltage Rating: The 150V rating provides a comfortable margin for applications with high voltage requirements, ensuring safe operation under various conditions.
  • TO-220 Packaging: The TO-220 package is widely used and recognized in the industry, offering ease of mounting and good thermal performance, making it suitable for applications with moderate to high power dissipation.

Applications

The PSMN030-150P is suitable for a diverse array of applications, including:

  • DC-DC Converters
  • Power Supplies
  • Motor Control
  • Automotive Applications
  • Switching Regulators
  • Power Management Systems

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 150V Continuous Drain Current (I<sub>D) 30A Power Dissipation (P<sub>D) 83W R<sub>DS(on) 0.030Ω Package TO-220

With its combination of efficiency, durability, and versatility, the PSMN030-150P MOSFET from NXP is a solid choice for engineers and designers focused on creating high-performance power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2513 $62.5650
115+ $1.0267 $118.0705
175+ $0.9946 $174.0550
240+ $0.9626 $231.0240
315+ $0.9305 $293.1075
420+ $0.8341 $350.3220
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,714 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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