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BU807TU

Part No BU807TU
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 150V 8A TO220-3 / Bipolar (BJT) Transistor NPN - Darlington 150 V 8 A 60 W Through Hole TO-220-3
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Mfr ON Semiconductor
Series -
Package Tube
Product Status Obsolete
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 150 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 5A
Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce -
Power - Max 60 W
Frequency - Transition -
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Base Product Number BU807
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000 pcs
Win Source Part Number 1381638-BU807TU
Ultra Librarian 3D Model Ultra Librarian BU807TU CAD Model

Description

The BU807TU from ON Semiconductor is a high voltage NPN bipolar power transistor designed for use in a wide range of electronic applications. This device is a part of ON Semiconductor's well-established line of power transistors, renowned for their reliability and performance.

With a collector-emitter voltage (Vceo) of 330V and a collector current capability (Ic) of up to 5A, the BU807TU is an excellent choice for power supply and amplifier applications where high voltage and current handling are required. The high gain bandwidth product and fast switching speeds make it suitable for high-frequency operations, while the device's robustness ensures longevity and stable performance under varying conditions.

The BU807TU features a TO-220 package, which is a widely accepted standard for power transistors. The TO-220 package provides an optimal balance between thermal performance and compactness, making it easy to integrate into various circuit designs. Additionally, the package is designed for through-hole mounting, which simplifies the assembly process and provides strong mechanical stability once soldered onto a printed circuit board (PCB).

ON Semiconductor has designed the BU807TU with several built-in protection features. These include a built-in base-emitter shunt resistor, which helps to protect the device against excessive voltage spikes, and a high breakdown voltage, which ensures safe operation even under stressful conditions. The device also has a low saturation voltage, which reduces power dissipation and improves efficiency in operation.

Whether you're designing power supplies, audio amplifiers, or any other high-voltage application, the BU807TU offers a reliable and efficient solution. Its combination of high voltage and current handling, fast switching, and robustness make it a versatile component that can meet the demanding requirements of modern electronic circuits.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to visit the ON Semiconductor website or contact their local sales representative for more information on the BU807TU high voltage NPN transistor.

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