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NJVMJB41CT4G

Part No NJVMJB41CT4G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Complementary Silicon Plastic Power Transistors
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Transistor Type NPN
Current - Collector (Ic) (Maximum) 6A
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) @ Ib, Ic 1.5V @ 600mA, 6A
Current - Collector Cutoff (Maximum) 700μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 15 @ 3A, 4V
Power - Max 2W
Frequency - Transition 3MHz
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting SMD
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Package D2PAK-3
Win Source Part Number 1231472-NJVMJB41CT4G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name MJB41C
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian NJVMJB41CT4G CAD Model

Description

The ON Semiconductor NJVMJB41CT4G is a high-performance, dual N-channel Power MOSFET designed to deliver efficient power management and conversion. This advanced power device is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the demanding requirements of modern electronic applications.

Key Features

  • Low On-Resistance: The NJVMJB41CT4G boasts an exceptionally low on-resistance, which significantly reduces conduction losses and improves overall efficiency.
  • High Current Capability: Engineered for applications that require high current, this MOSFET can handle substantial current loads, making it suitable for a wide range of power-intensive tasks.
  • Fast Switching Speed: With its quick switching performance, this device minimizes switching losses and is ideal for high-frequency applications.
  • Dual N-Channel Configuration: The dual N-channel design allows for flexibility in circuit design, providing options for parallel operation or half-bridge configurations.
  • Surface Mount Package: The NJVMJB41CT4G comes in a compact D2PAK (TO-263) surface mount package, which is perfect for space-constrained applications while ensuring robustness and reliability.
  • Environmentally Friendly: This product is compliant with RoHS regulations, ensuring that it meets global standards for environmental safety and sustainability.

Applications

The NJVMJB41CT4G is versatile and can be used in various applications, including:

  • DC/DC Converters
  • Power Management for Computers and Laptops
  • Motor Drives and Inverters
  • Power Supplies for Networking Equipment
  • Automotive Electronics
  • Renewable Energy Systems

Technical Specifications

With a continuous drain current rating of up to 56A and a maximum drain-source voltage of 100V, the NJVMJB41CT4G is equipped to handle rigorous power demands. Its thermal resistance and power dissipation characteristics ensure stable operation even under high power conditions.

In summary, the ON Semiconductor NJVMJB41CT4G is a reliable and efficient solution for designers looking to optimize their power management systems. Its robust features and compliance with environmental standards make it an excellent choice for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3831 $55.3240
90+ $1.1349 $102.1410
140+ $1.0994 $153.9160
190+ $1.0639 $202.1410
245+ $1.0285 $251.9825
330+ $0.9221 $304.2930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52,720 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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