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NST65011MW6T1G

Part No NST65011MW6T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 65V 0.1A SC88 / Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Manufacturer onsemi
Packaging Reel - TR
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 380mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NST65011
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number NST65011MW6T1GOSCT,ONSONSNST65011MW6T1G,NST65011MW6T1GOSDKR,NST65011MW6T1GOSTR,2156-NST65011MW6T1G-OS
Standard Package 3,000
Win Source Part Number 1325088-NST65011MW6T1G
Ultra Librarian 3D Model Ultra Librarian NST65011MW6T1G CAD Model

Description

ON Semiconductor NST65011MW6T1G Overview

The ON Semiconductor NST65011MW6T1G is a high-performance, low-saturation NPN bipolar junction transistor (BJT) designed for use in a broad range of applications. This versatile transistor offers a balance of good amplification and low voltage operation, making it suitable for switching and amplification purposes in consumer electronics, industrial control systems, and power management circuits.

Key Features

  • Low V<sub>CE(sat): The NST65011MW6T1G features a low collector-emitter saturation voltage, which helps to reduce power loss and improve efficiency in switching applications.
  • High Current Handling: With a continuous collector current (I<sub>C) rating of up to 1 A, this transistor can handle significant current, making it suitable for driving moderate loads.
  • Complementary PNP Type Available: For applications requiring a complementary PNP transistor, ON Semiconductor offers a matching part, which allows for easy implementation of push-pull configurations or other circuit topologies requiring complementary pairs.
  • Surface-Mount Package: The device comes in a small SOT-363 package, which is ideal for space-constrained applications and supports modern, high-density PCB design.
  • RoHS Compliant: This product is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for use in environmentally sensitive applications.

Applications

The NST65011MW6T1G is designed for versatility, catering to a wide array of applications that include, but are not limited to:

  • Power management circuits
  • DC-DC converters
  • Battery chargers
  • Motor controllers
  • Signal amplification
  • Consumer electronics
  • Industrial automation systems

Reliability and Performance

ON Semiconductor is known for its commitment to quality and reliability. The NST65011MW6T1G is built to meet the rigorous standards expected of modern semiconductor devices, ensuring dependable performance across its intended applications. Whether you're designing a new power management system or upgrading an existing circuit, this BJT from ON Semiconductor is a solid choice for efficient and reliable operations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
645+ $0.0901 $58.1145
1,565+ $0.0739 $115.6535
2,420+ $0.0716 $173.2720
3,335+ $0.0693 $231.1155
4,315+ $0.0670 $289.1050
5,770+ $0.0601 $346.7770
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,011 pieces
MOQ: 645 pcs
Order Increment : 1 pcs
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