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NSVMUN5111DW1T3G

Part No NSVMUN5111DW1T3G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PREBIAS 2PNP 50V SC88  /  Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 250mW
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NSVMUN5111
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 2156-NSVMUN5111DW1T3G-OS,488-NSVMUN5111DW1T3GCT,ONSONSNSVMUN5111DW1T3G,488-NSVMUN5111DW1T3GTR,488-NSVMUN5111DW1T3GDKR,NSVMUN5111DW1T3G-ND
Standard Package 10,000
Win Source Part Number 957784-NSVMUN5111DW1T3G
Ultra Librarian 3D Model Ultra Librarian NSVMUN5111DW1T3G CAD Model

Description

Introducing the NSVMUN5111DW1T3G from ON Semiconductor

The NSVMUN5111DW1T3G is a cutting-edge, high-performance product from ON Semiconductor, designed to cater to the needs of modern electronic applications. This innovative device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that do not compromise on reliability or functionality.

Key Features

  • Dual N-Channel MOSFET: This product features a dual N-Channel MOSFET configuration, offering efficient power handling and high-speed switching capabilities. The dual-channel design allows for greater flexibility in circuit designs and can help reduce the overall component count in space-constrained applications.
  • Low On-Resistance: The NSVMUN5111DW1T3G boasts an exceptionally low on-resistance, which translates to reduced power losses and improved overall efficiency. This characteristic is crucial for applications that demand minimal energy wastage and extended battery life.
  • High Current Capability: With its ability to handle high currents, this device is suitable for a wide range of power management tasks. Its robust construction ensures that it can sustain the demands of high-power circuits without compromising performance.
  • Compact SOT-363 Package: The compact SOT-363 package is ideal for space-constrained applications. Its small footprint allows for high-density board designs, enabling designers to pack more functionality into a limited space.
  • Halogen-Free: In line with ON Semiconductor's commitment to environmental sustainability, the NSVMUN5111DW1T3G is a halogen-free component. This feature ensures that the product is more environmentally friendly and meets the requirements of eco-conscious consumers and regulations.

Applications

The versatility of the NSVMUN5111DW1T3G makes it suitable for a diverse range of applications, including but not limited to:

  • Power management modules
  • DC/DC converters
  • Battery-powered devices
  • Load/switching circuits
  • Portable electronics

ON Semiconductor's NSVMUN5111DW1T3G is an exemplary component that delivers performance, efficiency, and reliability. It is an ideal choice for designers looking to enhance their electronic designs with a MOSFET that offers a blend of power and precision.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,000+ $0.0579 $57.9000
2,430+ $0.0476 $115.6680
3,760+ $0.0461 $173.3360
5,185+ $0.0446 $231.2510
6,705+ $0.0431 $288.9855
8,985+ $0.0386 $346.8210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,550 pieces
MOQ: 1000 pcs
Order Increment : 1 pcs
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