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NTJD3158CT2G

Part No NTJD3158CT2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V SC88-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 630mA, 820mA
Maximum Rds On at Id,Vgs 375 mOhm @ 630mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 3nC @ 4.5V
Max Input Capacitance 46pF @ 20V
Maximum Power Dissipation 270mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 1083891-NTJD3158CT2G
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Automotive, Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian NTJD3158CT2G CAD Model

Description

ON Semiconductor NTJD3158CT2G Dual P-Channel Power MOSFET

The NTJD3158CT2G is a high-performance, dual P-Channel Power MOSFET module manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This compact and energy-efficient component is designed to meet the stringent requirements of modern electronic devices, where space is at a premium and power efficiency is crucial.

Key Features

  • Low On-Resistance: The NTJD3158CT2G boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved power efficiency in applications.
  • Dual P-Channel Configuration: This component integrates two P-Channel MOSFETs in a single package, allowing for space-saving designs and simplified circuit complexity.
  • High Power and Current Handling: With a continuous drain current (I<sub>D) rating, this device can handle significant power and current, making it suitable for a wide range of applications.
  • Small Footprint: Enclosed in a compact TSOP-6 package, the NTJD3158CT2G minimizes PCB space usage, which is essential for portable and space-constrained applications.
  • Gate Charge (Q<sub>G): The device features an optimized gate charge, which ensures lower switching losses and is ideal for high-frequency switching applications.

Applications

The NTJD3158CT2G is versatile and can be used in various applications including, but not limited to:

  • Power management circuits
  • Load/switching applications
  • Battery management systems
  • DC-DC converters
  • Portable electronic devices

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The NTJD3158CT2G is no exception and is produced with state-of-the-art manufacturing processes, ensuring consistent performance and longevity in the field. Furthermore, this MOSFET is RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability.

Whether you are designing power-efficient portable devices or robust power management systems, the NTJD3158CT2G from ON Semiconductor offers a reliable and efficient solution that engineers and designers can trust.

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