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NTMFS5H600NLT1G

Part No NTMFS5H600NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 35A/250A 5DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 49 Weeks
Features N-Channel 60 V 35A (Ta), 250A (Tc) 3.3W (Ta), 160W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Manufacturer ON Semiconductor
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerTDFN, 5 Leads
Case / Package 5-DFN (5x6) (8-SOFL)
Family Name NTMFS5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number NTMFS5H600NLT1GOSCT, NTMFS5H600NLT1GOSTR, NTMFS5H600NLT1GOSDKR
Quantity per package 1500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 887805-NTMFS5H600NLT1G
Ultra Librarian 3D Model Ultra Librarian NTMFS5H600NLT1G CAD Model

Description

ON Semiconductor NTMFS5H600NLT1G Power MOSFET

The NTMFS5H600NLT1G is a state-of-the-art N-Channel Power MOSFET from ON Semiconductor, designed to deliver high efficiency and performance for a wide range of applications. This power MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, which are engineered to minimize power losses and improve system reliability.

This device features a low on-resistance (RDS(on)) and low gate charge (Qg), which significantly enhances its performance in switching applications. The NTMFS5H600NLT1G is suitable for use in high-speed power switching circuits, including DC-DC converters, motor drives, and other power management tasks where energy efficiency is a critical factor.

With a maximum continuous drain current (ID) of 48 A, this MOSFET can handle substantial current loads, making it an excellent choice for demanding environments. It also supports a maximum drain-to-source voltage (VDSS) of 60 V, providing a generous margin for a variety of electronic designs.

The NTMFS5H600NLT1G comes in a compact, surface-mount package (5 mm x 6 mm), which is ideal for space-constrained applications. The package is designed to facilitate excellent thermal performance and low inductance, which are crucial for maintaining stability and efficiency in high-frequency operations.

Key features of the NTMFS5H600NLT1G include:

  • Low RDS(on) to minimize conduction losses
  • High ID rating for handling high current applications
  • Low Qg for efficient high-speed switching
  • 60 V VDSS rating for robust operation in various circuits
  • Thermally enhanced package for improved heat dissipation

This ON Semiconductor MOSFET is designed to meet the stringent requirements of modern electronic systems, offering designers a reliable and efficient power switching solution. Whether you are developing power supplies, lighting systems, or automotive electronics, the NTMFS5H600NLT1G is engineered to provide superior performance and energy savings.

For detailed specifications and application guidance, engineers and designers are encouraged to consult the official datasheet and design resources provided by ON Semiconductor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.4558 $52.1906
17+ $6.1176 $103.9992
26+ $5.9265 $154.0890
35+ $5.7353 $200.7355
46+ $5.5441 $255.0286
61+ $4.9706 $303.2066
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Availability: 20,853 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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