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NTMS4107NR2G

Part No NTMS4107NR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 45nC @ 4.5V
Max Input Capacitance 6000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 930mW (Ta)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 125653-NTMS4107NR2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMS4107NR2G CAD Model

Description

The NTMS4107NR2G is a high-performance Power MOSFET developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This device is part of the N-channel MOSFET family and is designed to deliver efficient power management and conversion for a wide range of applications.

Key Features

  • Low On-Resistance: The NTMS4107NR2G boasts an exceptionally low on-resistance, which translates to reduced power losses and improved efficiency in electronic circuits.
  • High Current Capability: Engineered for high current applications, this MOSFET can handle continuous drain currents, making it suitable for demanding power applications.
  • Advanced Trench Technology: Utilizing ON Semiconductor's advanced trench technology, the NTMS4107NR2G offers superior performance in terms of switching speeds and reliability.
  • Thermal Management: With an excellent thermal performance profile, this MOSFET is designed to operate reliably even under high temperature conditions, ensuring long service life and stability.
  • Low Gate Charge: The device has a low gate charge, which minimizes the energy required to switch the MOSFET on and off, further enhancing its efficiency.

Applications

The NTMS4107NR2G is versatile and can be used in various applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Automotive applications
  • Switching regulators

Product Specifications

The NTMS4107NR2G operates with a drain-to-source voltage (V<sub>DS) of 30V, and a continuous drain current (I<sub>D) of 6.3A. Its power dissipation is rated at 2.5W, which coupled with a low threshold voltage, makes it highly efficient for power-sensitive designs. The device is available in a compact SO-8 package, ensuring a minimal footprint on printed circuit boards (PCBs).

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NTMS4107NR2G is no exception and is manufactured to meet rigorous industry standards for performance and reliability, making it a trusted choice for engineers and designers in the field of power electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4204 $58.8560
335+ $0.3453 $115.6755
520+ $0.3350 $174.2000
715+ $0.3234 $231.2310
925+ $0.3130 $289.5250
1,235+ $0.2807 $346.6645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 101,100 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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