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NVMFD5853NLT1G

Part No NVMFD5853NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 12A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 12A
Maximum Rds On at Id,Vgs 10 mOhm @ 15A, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Power Dissipation 3W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Win Source Part Number 1084136-NVMFD5853NLT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NVMFD5853NLT1G CAD Model

Description

ON Semiconductor NVMFD5853NLT1G Product Overview

The NVMFD5853NLT1G is a high-performance, Power MOSFET product from ON Semiconductor, designed to deliver efficient power management and conversion in a wide range of applications. This device is part of ON Semiconductor's portfolio of energy-efficient semiconductors, which are crafted to meet the increasing demand for greener and more power-efficient solutions in the electronics industry.

The NVMFD5853NLT1G boasts a compact, dual N-channel configuration, which is optimized for fast switching performance. This feature makes it an ideal choice for synchronous buck converters, where swift switching is crucial for maintaining efficiency. The MOSFET is also suitable for other high-frequency power applications such as power supplies, DC-DC converters, and motor drives.

Constructed with ON Semiconductor's advanced PowerTrench® technology, the NVMFD5853NLT1G offers a low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency. This technology also enhances the device's thermal performance, ensuring reliability even under high current and temperature conditions.

The NVMFD5853NLT1G comes in a compact, surface-mount Power 56 Dual Cool package, which is designed to minimize the footprint on the PCB while maximizing heat dissipation. This packaging solution allows for dual-side cooling, further aiding in the reduction of thermal resistance and enabling the device to operate at lower temperatures.

Key features of the NVMFD5853NLT1G include a continuous drain current (I<sub>D) rating of up to 30 A, a maximum drain-source voltage (V<sub>DSS) of 25 V, and a low gate charge (Q<sub>G), which facilitates reduced switching losses. The device also has a robust body diode, which can handle high surge currents without failing, making it a reliable choice for applications with inductive loads.

ON Semiconductor's NVMFD5853NLT1G is RoHS compliant and halogen-free, reflecting the company's commitment to environmental sustainability. With its combination of performance, efficiency, and reliability, the NVMFD5853NLT1G is an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.1090 $61.0900
23+ $5.0126 $115.2898
35+ $4.8560 $169.9600
48+ $4.6993 $225.5664
62+ $4.5427 $281.6474
83+ $4.0728 $338.0424
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,002 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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