The 2SD1819A is a silicon NPN epitaxial planar transistor from Panasonic. This transistor is primarily designed for high-speed switching and amplifier applications.

Applications:

• High-speed switching circuits
• Amplifier circuits
• Power supplies
• DC-DC converters
• Inverter circuits

Features:

• High collector current capability
• Low saturation voltage
• High-speed switching characteristics
• Excellent linearity
• High hFE

Benefits:

• Efficient and reliable switching performance.
• Reduced power loss in switching applications due to low saturation voltage.
• Enhanced amplification performance.
• Suitable for use in power management systems.

Technical Specifications:

The 2SD1819A features a collector-base voltage (VCBO) of 60V, a collector-emitter voltage (VCEO) of 50V, and an emitter-base voltage (VEBO) of 6V. It has a continuous collector current (IC) of 3A and a peak collector current (ICM) of 6A. The collector power dissipation (PC) is 20W. The transistor has a transition frequency (fT) of 80 MHz and a typical current gain (hFE) of 100 to 320. The operating junction temperature range is -55°C to +150°C.

The 2SD1819A is typically available in a TO-126 package.