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Same model may have multiple batches, images only for reference.
XN1214-(TX) Real Image
Same model may have multiple batches, images only for reference.

XN1214-(TX)

Part No XN1214-(TX)
Manufacturer Panasonic
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W MINI5
Datasheet
XN1214-(TX) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package Mini5-G1
Win Source Part Number 043952-XN1214-(TX)
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian XN1214-(TX) CAD Model

Description

The XN1214-(TX) transistor from Panasonic Electronic Components is a medium popularity component in the Discrete Semiconductor Products category.

  • Category: Discrete Semiconductor Products
  • Popularity: medium popularity
  • Status: obsolete(EOL)
  • Supply and Demand: limited
  • Type: pre-biased dual NPN transistor
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 300mW
  • Typical Gain (hFE): 80

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