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MRF8P9300HSR6

Part No MRF8P9300HSR6
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 70V 960MHZ NI-1230HS / RF Mosfet 28 V 2.4 A 960MHz 19.4dB 100W NI-1230S
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Configuration Dual
Frequency 960MHz
Gain 19.4dB
Voltage - Test 28 V
Current - Test 2.4 A
Power - Output 100W
Voltage - Rated 70 V
Mounting Type Chassis Mount
Package / Case NI-1230S
Supplier Device Package NI-1230S
Base Product Number MRF8
Standard Package 150 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 644239-MRF8P9300HSR6
Ultra Librarian 3D Model Ultra Librarian MRF8P9300HSR6 CAD Model

Description

The NXP MRF8P9300HSR6 is a state-of-the-art RF power LDMOS transistor that is designed to deliver exceptional performance for a wide range of high-frequency applications. This robust component is part of NXP's high-power, high-efficiency product line, which is renowned for its reliability and cutting-edge technology.

Optimized for broadband operation, the MRF8P9300HSR6 boasts a frequency range from 1.8 to 2.2 GHz, making it an ideal choice for applications such as cellular base station transmitters, RF energy, industrial, scientific, and medical (ISM) applications, as well as for aerospace and defense systems. This versatility ensures that the MRF8P9300HSR6 can be integrated into a multitude of RF power solutions.

With an impressive output power of 90 Watts, this LDMOS transistor provides high gain and high efficiency, which are critical parameters for modern RF power amplifiers. Its high gain of 17.3 dB at 2.1 GHz ensures that signal strength is maintained, while an outstanding efficiency of up to 35% reduces operational costs and thermal challenges in high-power systems.

The MRF8P9300HSR6 is housed in a compact and rugged ceramic package, which not only ensures its durability but also aids in thermal management—a crucial aspect for maintaining performance and longevity in high-power applications. The device is also characterized by its excellent ruggedness, capable of withstanding a load mismatch ratio (VSWR) of 10:1 through all phases.

NXP's commitment to quality is evident in the MRF8P9300HSR6, with features such as integrated ESD protection, which safeguards the device from electrostatic damage during handling and operation. This RF power transistor is also designed for easy integration into existing systems, with a simple and straightforward application circuit that minimizes design-in time and accelerates time-to-market for RF solutions.

In summary, the NXP MRF8P9300HSR6 RF power transistor is a high-performance, reliable, and versatile component that is well-suited for a variety of high-frequency power amplifier applications. Its combination of power, efficiency, and ruggedness makes it an excellent choice for designers looking to maximize performance while maintaining cost-effectiveness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $84.7001 $84.7001
2+ $82.0532 $164.1064
3+ $79.4063 $238.2189
4+ $76.7595 $307.0380
6+ $68.8188 $412.9128
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 953 pieces
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