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Same model may have multiple batches, images only for reference.
XP0NG8A00L Real Image
Same model may have multiple batches, images only for reference.

XP0NG8A00L

Part No XP0NG8A00L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.15W SMINI6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel
Status Obsolete
Transistor Type PNP - Pre-Biased + Diode
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Minimum) at Ic, Vce 20 at 5mA, 10V
Vce Saturation (Maximum) at Ib, Ic 250mV at 300μA, 10mA
Current - Collector Cutoff (Maximum) 500nA
Frequency - Transition 80MHz
Maximum Power 150mW
Mounting Style SMD
Manufacturer Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SMINI6-G1
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 735926-XP0NG8A00L
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian XP0NG8A00L CAD Model

Description

The XP0NG8A00L is a PNP pre-biased transistor with a diode from Panasonic Electronic Components. It has a frequency transition of 80MHz and a maximum collector-emitter breakdown voltage of 50V.

  • Type: PNP Pre-Biased Transistor with Diode
  • Frequency Transition: 80MHz
  • Collector-Emitter Breakdown Voltage (Max): 50V
  • Current Cutoff: 500nA
  • Current Collector: 100mA
  • Supply and Demand Status: Balanced
  • Status: Obsolete
  • Package: 6-TSSOP, SC-88, SOT-363
  • Maximum Power: 150mW
  • Vce Saturation: 250mV @ 300μA, 10mA
  • DC Current Gain: 20 @ 5mA, 10V
  • Base Resistor: 4.7 kOhms
  • Emitter-Base Resistor: 4.7 kOhms

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