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Same model may have multiple batches, images only for reference.
PJS6413_S1_00001 Real Image
Same model may have multiple batches, images only for reference.

PJS6413_S1_00001

Part No PJS6413_S1_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description 20V P-CHANNEL ENHANCEMENT MODE M / P-Channel 20 V 4.4A (Ta) 2W (Ta) Surface Mount SOT-23-6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 82mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 522 pF @ 10 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-6
Package / Case SOT-23-6
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJS6413_S1_00001CT,3757-PJS6413_S1_00001TR,3757-PJS6413_S1_00001DKR
Standard Package 3,000
Win Source Part Number 1085312-PJS6413_S1_00001
Ultra Librarian 3D Model Ultra Librarian PJS6413_S1_00001 CAD Model

Description

The Panjit International Inc. MOSFET (Metal Oxide) P-Channel transistor is an excellent choice for a wide variety of electronic applications.

  • Drain to Source Voltage: 20 V
  • Continuous Drain Current: 4.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 82mOhm @ 4.4A, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V
  • Package: SOT-23-6
  • Temperature Range: -55 °C to 150 °C
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

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