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Same model may have multiple batches, images only for reference.
RSJ550N10TL Real Image
Same model may have multiple batches, images only for reference.

RSJ550N10TL

Part No RSJ550N10TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 55A LPTS
Datasheet
RSJ550N10TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 55A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 143nC @ 10V
Max Input Capacitance 6150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 16.8 mOhm @ 27.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LPTS
Dimension SC-83
Win Source Part Number 1092797-RSJ550N10TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSJ550N10TL CAD Model

Description

The Rohm Semiconductor LPTS is a N-Channel MOSFET with a maximum power dissipation of 100W (Tc) and a continuous drain current of 55A (Ta).

  • Manufacturer: Rohm Semiconductor
  • Channel Type: N-Channel
  • Power Dissipation: 100W (Tc)
  • Continuous Drain Current: 55A (Ta)
  • Drive Voltage: 4V to 10V
  • Mounting Technology: SMD (SMT)
  • Product Category: Discrete Semiconductor Products
  • Product Status: Active

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80+ $2.1857 $174.8560
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142+ $2.0447 $290.3474
190+ $1.8332 $348.3080
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