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Same model may have multiple batches, images only for reference.
SP8M2FU6TB Real Image
Same model may have multiple batches, images only for reference.

SP8M2FU6TB

Part No SP8M2FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 3.5A 8SOIC
Datasheet
SP8M2FU6TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A
Maximum Rds On at Id,Vgs 83 mOhm @ 3.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 3.5nC @ 5V
Max Input Capacitance 140pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1101456-SP8M2FU6TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SP8M2FU6TB CAD Model

Description

The Rohm Semiconductor 1101456-SP8M2FU6TB is a high-performance N and P-channel FET designed for use in various electronic circuits.

  • Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Mounting: Surface Mount Technology
  • Packaging: Reel
  • Status: Not Recommended for New Designs
  • Continuous Drain Current: 3.5A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 3.5nC @ 5V
  • Maximum Input Capacitance: 140pF @ 10V
  • Maximum Rds On: 83 mOhm @ 3.5A and 10V
  • Popularity: Medium
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4655 $58.1875
305+ $0.3823 $116.6015
470+ $0.3696 $173.7120
650+ $0.3581 $232.7650
835+ $0.3465 $289.3275
1,120+ $0.3107 $347.9840
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Availability: 5,500 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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