The 2SB986 is a silicon PNP epitaxial planar transistor manufactured by SANYO. It is designed for low-frequency power amplification applications. It is commonly used in audio amplifiers and general-purpose switching circuits.

Applications

• Audio Amplifiers: Used in the output stages of audio amplifiers for driving speakers.
• Power Switching: Employed in power switching circuits for controlling DC loads.
• DC-DC Converters: Found in DC-DC converters as a switching element.
• General Purpose Amplification: Used in various amplification circuits for signal boosting.

Features

• High Collector Current (IC): Supports collector currents up to -3A.
• Low Saturation Voltage (VCE(sat)): Reduces power dissipation during switching.
• High Power Dissipation (PC): Capable of dissipating considerable power.
• Good Linearity: Provides consistent amplification performance.
• PNP Epitaxial Planar Transistor: Highlighting its manufacturing process and structure.

Benefits

• Efficient Power Amplification: Low saturation voltage ensures efficient power usage.
• Reliable Switching: High current handling enables reliable switching performance.
• Consistent Performance: Good linearity maintains signal fidelity in amplification.
• Easy Integration: Suitable for a variety of circuit designs due to its common characteristics.

Additional Details

Absolute Maximum Ratings:

• Collector-Base Voltage (VCBO): -60V
• Collector-Emitter Voltage (VCEO): -50V
• Emitter-Base Voltage (VEBO): -6V
• Collector Current (IC): -3A
• Collector Power Dissipation (PC): 10W
• Junction Temperature (Tj): 150°C
• Storage Temperature (Tstg): -55 to +150°C

Electrical Characteristics (at Ta = 25°C):

• Collector Cutoff Current (ICBO): -1µA (max)
• Emitter Cutoff Current (IEBO): -1µA (max)
• DC Current Gain (hFE): 100-320 (at VCE = -2V, IC = -0.5A)
• Collector-Emitter Saturation Voltage (VCE(sat)): -0.5V (max) (at IC = -1A, IB = -0.1A)
• Transition Frequency (fT): 5 MHz (typ)