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PD57060S-E

Part No PD57060S-E
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 945MHZ PWRSO10 / RF Mosfet LDMOS 28 V 100 mA 945MHz 14.3dB 60W PowerSO-10RF (Straight Lead)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr STMicroelectronics
Package Tube
Transistor Type LDMOS
Frequency 945MHz
Gain 14.3dB
Voltage - Test 28 V
Current Rating (Amps) 7A
Current - Test 100 mA
Power - Output 60W
Voltage - Rated 65 V
Package / Case PowerSO-10 Exposed Bottom Pad
Supplier Device Package PowerSO-10RF (Straight Lead)
Base Product Number PD57060
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names PD57060SE,497-5310-5,-1138-PD57060S-E
Standard Package 50
Win Source Part Number 1199585-PD57060S-E
Ultra Librarian 3D Model Ultra Librarian PD57060S-E CAD Model

Description

Product Overview: PD57060S-E RF Power Transistor

The PD57060S-E is a state-of-the-art RF power transistor from STMicroelectronics, designed to deliver exceptional performance for a wide range of high-frequency applications. This device is part of ST's POWERFLAT family, known for its compact size and high power density, making it an ideal choice for space-constrained environments.

Key Features

  • Frequency Performance: The PD57060S-E operates at a broad frequency range, making it suitable for various RF applications, including but not limited to, cellular base station amplifiers, broadcast transmitters, and RF heating.
  • Advanced Technology: Built with ST's latest LDMOS technology, this transistor offers high gain, efficiency, and linearity, which are essential for high-performance RF systems.
  • High Power Output: It is capable of delivering high output power, which is critical for applications requiring strong signal transmission or amplification.
  • Thermal Management: The PD57060S-E comes in a POWERFLAT package that provides excellent thermal performance, ensuring reliability and longevity even under strenuous operating conditions.
  • Robustness: The device is designed to withstand harsh operating conditions, including high VSWR (Voltage Standing Wave Ratio) scenarios, providing a reliable solution for demanding applications.

Applications

The versatility of the PD57060S-E allows it to be used in a variety of applications. It is particularly well-suited for:

  • Cellular base station amplifiers for GSM, CDMA, and LTE networks
  • Broadcast transmitters for radio and television
  • Industrial, scientific, and medical (ISM) applications, including RF heating and plasma generation
  • Professional mobile radio amplifiers
  • High-power RF circuits and test equipment

Conclusion

The PD57060S-E from STMicroelectronics is a robust and reliable RF power transistor that offers a compelling blend of power, performance, and versatility. Its advanced features and thermal efficiency make it a top choice for designers looking to optimize their high-frequency applications. With its POWERFLAT package, the PD57060S-E ensures that space constraints do not compromise power or efficiency, making it a leading solution in the RF power transistor market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $64.5113 $64.5113
2+ $52.9324 $105.8648
3+ $51.2782 $153.8346
5+ $49.6241 $248.1205
6+ $47.9700 $287.8200
7+ $43.0076 $301.0532
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46 pieces
Order Increment : 1 pcs
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