The STB24N60M6 is a high-performance N-Channel MOSFET from STMicroelectronics, designed to offer superior switching performance and high thermal efficiency. This power MOSFET is part of STMicroelectronics' MDmesh™ M6 series, which integrates the company's latest advancements in superjunction technology.

Key Features

• High Voltage Capability: The STB24N60M6 is capable of withstanding drain-source voltages of up to 600V, making it suitable for a variety of high voltage applications.
• Low On-Resistance (R<sub>DS(on)): This MOSFET features an extremely low on-resistance of typically 0.165 Ω, which contributes to its high efficiency and reduced power losses during operation.
• High Current Rating: With a continuous drain current of 18 A, this device can handle significant power, suitable for demanding applications.
• Reduced Gate Charge (Q<sub>g): A lower gate charge ensures faster switching speeds, improving the overall performance of power conversion systems.
• Enhanced dv/dt Capability: The robust design allows for improved dv/dt handling, providing reliable performance in applications with fast switching requirements.

Applications

The STB24N60M6 is designed for a wide range of applications, including:

• Switched Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC/DC Converters
• Welding Equipment
• UPS Systems
• Solar Inverters
• Motor Control

Package and Quality

The STB24N60M6 is housed in a D2PAK package, known for its compact size and ability to handle high thermal loads. This package is suitable for surface-mount technology (SMT), allowing for efficient assembly in modern manufacturing processes. STMicroelectronics ensures high-quality standards, with rigorous testing and quality control measures in place to deliver reliable and consistent performance.

For more detailed specifications and application support, visit the STMicroelectronics website or contact their technical support team.