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STB30NF10T4

Part No STB30NF10T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 1180pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031075-STB30NF10T4
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB30NF10T4 CAD Model

Description

STB30NF10T4 - N-Channel MOSFET by STMicroelectronics

The STB30NF10T4 is a high-performance N-Channel MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This device is engineered to deliver exceptional power efficiency and reliability for a wide range of applications, including switch-mode power supplies, DC-DC converters, motor control, and general-purpose switching applications.

Key Features

  • Low Threshold Drive: The STB30NF10T4 operates at a low gate threshold voltage, making it suitable for low-voltage applications and ensuring easy drive capability.
  • High Current Capability: With a continuous drain current (ID) of 30A, this MOSFET can handle high current loads, making it ideal for demanding power applications.
  • Low On-Resistance: A low on-state resistance (RDS(on)) of 0.040 ohm minimizes conduction losses and improves overall efficiency, which is critical for power management circuits.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche energy (EAS) to ensure robustness and reliability in harsh conditions.
  • Exceptional Ruggedness: The device is designed to withstand high energy pulses in the avalanche and commutation modes, offering enhanced durability and performance stability.

Applications

The versatility of the STB30NF10T4 allows it to be used in a variety of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor control systems
  • High-efficiency switching circuits
  • Power management solutions

Product Specifications

The STB30NF10T4 boasts the following specifications:

  • Voltage - Rated: 100V
  • Current Rating: 30A
  • RDS(on): 0.040 ohm
  • Package / Case: D2PAK

STMicroelectronics' commitment to quality and performance is evident in the STB30NF10T4 N-Channel MOSFET. This component represents a reliable and efficient solution for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0749 $53.7450
115+ $0.8820 $101.4300
180+ $0.8544 $153.7920
245+ $0.8268 $202.5660
315+ $0.7993 $251.7795
420+ $0.7166 $300.9720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 72,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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