STD47N10F7AG - STMicroelectronics

The STD47N10F7AG is a high-performance, N-channel Power MOSFET produced by the renowned semiconductor manufacturer, STMicroelectronics. This advanced power device is part of ST's STripFET VII DeepGATE technology, which is designed to deliver superior switching performance and improved thermal efficiency, making it an ideal choice for a wide range of power applications.

Key Features

• Low On-Resistance: The STD47N10F7AG boasts an extremely low on-resistance (R<sub>DS(on)) of just 0.047 Ohms, which translates to higher efficiency in power conversion applications.
• High Current Capability: With a continuous drain current (I<sub>D) of 80 A, this MOSFET can handle high current loads, making it suitable for demanding applications.
• 100 V Drain-Source Voltage: The device can sustain a maximum drain-source voltage (V<sub>DS) of 100 V, providing a good safety margin for a variety of electronic circuits.
• Low Gate Charge: The low gate charge (Q<sub>g) ensures fast switching performance, which is essential for reducing switching losses in power converters.
• Enhanced Durability: The MOSFET is encapsulated in a robust surface-mount DPAK package, which not only saves space but also enhances the thermal and mechanical durability of the device.

Applications

The versatility of the STD47N10F7AG makes it suitable for a diverse range of applications, including:

• Switch Mode Power Supplies (SMPS)
• DC-DC Converters
• Motor Drives
• LED Lighting Solutions
• Automotive Applications
• High-Efficiency Power Management Circuits

STMicroelectronics' commitment to innovation is reflected in the STD47N10F7AG, which is designed to meet the stringent requirements of modern electronic systems. With its combination of high efficiency, power density, and reliability, this Power MOSFET is an excellent choice for engineers looking to optimize their power designs.