STW45N65M5 - N-channel 650 V, 0.045 Ω typ., 45 A MDmesh™ M5 Power MOSFET in a TO-247 package
The STW45N65M5 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the innovative MDmesh™ M5 technology. This device is tailored for applications that demand high efficiency and power density, making it an ideal choice for a wide range of switching applications including switch-mode power supplies, lighting, welding, and high-performance drives.
The STW45N65M5 boasts a drain-source voltage (VDS) of 650 V, which ensures that the device can handle high voltage applications with ease. The low on-resistance (RDS(on)) of just 0.045 Ω typ. at VGS = 10 V, combined with a maximum continuous drain current (ID) of 45 A, allows for high current handling capability with minimal conduction losses.
One of the key features of this Power MOSFET is its MDmesh™ M5 technology, which provides a perfect blend of low on-resistance and high switching speed. The result is a product that exhibits reduced switching losses without compromising on the ease of driving the MOSFET. This technology also enables the STW45N65M5 to achieve outstanding dv/dt capability, enhancing the reliability of the device under hard-switching conditions.
The TO-247 package of the STW45N65M5 is well-known for its robust design and excellent thermal performance. The package ensures that the MOSFET can handle high thermal and electrical loads, making it suitable for high-power applications. Additionally, the package is designed to facilitate easy mounting on a heatsink, which is critical for maintaining the device's performance over extended periods.
Other notable features of the STW45N65M5 include a 100% avalanche tested design, which guarantees the device's ruggedness and reliability in adverse conditions. The Zener-protected gate helps to prevent over-voltage damage, thus enhancing the MOSFET's overall durability.
Overall, the STW45N65M5 from STMicroelectronics represents a significant advancement in power MOSFET technology, delivering high efficiency, reliability, and performance for demanding power conversion applications.