The STW56N60M2-4 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology and innovation. This device is part of the MDmesh™ M2 series, which utilizes a proprietary vertical structure and optimized mesh overlay process to deliver outstanding on-resistance and switching performance.

Key Features

• High Voltage Capability: This MOSFET is designed to handle high voltages, with a drain-source voltage (V<sub>DS) of 600V, making it suitable for a variety of power applications.
• Low On-Resistance: The STW56N60M2-4 boasts a very low on-state resistance (R<sub>DS(on)) of 0.036 Ω, which enhances efficiency by minimizing conduction losses.
• Fast Switching Performance: The device has been optimized for fast switching, reducing switching losses and improving overall performance in high-frequency circuits.
• High Current Capacity: With a continuous drain current (I<sub>D) of 56A, this MOSFET can handle significant power, making it ideal for demanding applications.
• 100% Avalanche Tested: Ensures reliability and robustness by confirming the MOSFET's ability to withstand high-energy pulses in avalanche and commutation modes.
• Zener-protected: The gate-source is protected with a built-in Zener diode, which provides protection against electrostatic discharge and enhances ruggedness.

Applications

The STW56N60M2-4 is versatile and can be used in a wide range of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC/DC Converters
• Welding Equipment
• Uninterruptible Power Supplies (UPS)
• Solar Inverters
• Electric Vehicle (EV) Charging Stations

Quality and Environmental Compliance

The STW56N60M2-4 is not only a testament to STMicroelectronics' commitment to technological excellence but also to environmental stewardship. This product is compliant with the RoHS directive, which limits the use of certain hazardous substances in electrical and electronic equipment.