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TSM4N70CP ROG

Part No TSM4N70CP ROG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 3.5A TO252 / N-Channel 700 V 3.5A (Tc) 56W (Tc) Surface Mount TO-252, (D-Pak)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Series -
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 595 pF @ 25 V
FET Feature -
Power Dissipation (Max) 56W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500 pcs
Win Source Part Number 1383751-TSM4N70CP ROG
Ultra Librarian 3D Model Ultra Librarian TSM4N70CP ROG CAD Model

Description

The TSM4N70CP ROG is a N-Channel MOSFET transistor from Taiwan Semiconductor.

  • Drain to Source Voltage (Vdss): 700V
  • Continuous Drain Current (Id): 3.5A
  • Rds On (Max): 3.3Ohm @ 2A and 10V
  • Gate Charge (Qg): 14nC @ 10V
  • Package: TO-252-3
  • Mounting Type: Surface Mountable
  • Power Dissipation: 56W
  • Operating Temperature Range: -55°C to 150°C

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